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投稿时间:2019-11-17 修订日期:2019-11-19 录用日期:2019-11-20 网络发布日期:2020-04-18
投稿时间:2019-11-17 修订日期:2019-11-19 录用日期:2019-11-20 网络发布日期:2020-04-18
中文摘要: 以SiO2为原料,采用熔盐电解法制备得到了纳米尺度的单质Si。研究了槽电压对SiO2电还原过程和单质Si微观结构的影响。在槽电压1.7~2.0 V范围内,较高的槽电压有利于SiO2的电解还原,在1.8~2.0 V槽电压下,SiO2能够被电解完全生成单质Si。当槽电压为1.8 V时,电解产物Si的微观结构为40 nm左右宽的纳米线;当槽电压为1.9 V时,微观结构包括50 nm左右宽纳米线和粒径100 nm左右的纳米颗粒;当槽电压为2.0 V时,微观结构为100~300 nm的纳米颗粒堆积。
Abstract:Nanosized metallic silicon was prepared via molten salt electrolysis of SiO2. Effects of cell voltage on electrochemical reduction of SiO2 and microstructure of metallic silicon were investigated. The results suggest that higher cell voltage is in favor of electrochemical reduction of SiO2 with cell voltage varying from 1.7 V to 2.0 V. As cell voltage is operated under 1.8-2.0 V, SiO2 can be thoroughly electrolyzed to form metallic Si. Micro-structure of electro-produced Si is nanowire in the width of around 40 nm when cell voltage is 1.8 V. As cell voltage rises to 1.9 V, microstructure of silicon contains nanowire in the width of around 50 nm and nanosized particles with size of around 100 nm. As cell voltage is controlled at 2.0 V, microstructure of silicon is converted to accumulation of nanoparticles with size of 100-300 nm.
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基金项目:国家自然科学基金资助项目(51804148);云南省应用基础研究计划项目(2018FD038)
引用文本:
张英杰,周忠仁,华一新,董鹏.CaCl2-NaCl熔盐中槽电压对SiO2电还原影响机制研究[J].有色金属(冶炼部分),2020(5):39-43.
ZHANG Ying-jie,ZHOU Zhong-ren,HUA Yi-xin,DONG Peng.Study on Mechanism of Influence of Cell Voltage on Electrochemical Reduction of SiO2 in CaCl2-NaCl Molten Salt[J].Nonferrous Metals (Extractive Metallurgy),2020(5):39-43.
张英杰,周忠仁,华一新,董鹏.CaCl2-NaCl熔盐中槽电压对SiO2电还原影响机制研究[J].有色金属(冶炼部分),2020(5):39-43.
ZHANG Ying-jie,ZHOU Zhong-ren,HUA Yi-xin,DONG Peng.Study on Mechanism of Influence of Cell Voltage on Electrochemical Reduction of SiO2 in CaCl2-NaCl Molten Salt[J].Nonferrous Metals (Extractive Metallurgy),2020(5):39-43.

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