Abstract:Effect of inserting MgO layers on magnetic anisotropy energy and interfacial electronic structure of FeN alloy films was investigated. The results show that by depositing MgO layer above FeN layer, an effective Fe-O orbital hybridization is introduced at FeN/MgO interface, which favors to enhance magnetic anisotropy energy (Keff) and promote perpendicular magnetic anisotropy. However, with deposition of MgO layer below FeN layer, the epitaxial growth between Cr and FeN lattice is destructed, resulting in an obvious Keff decrement and magnetic anisotropy destruction.